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IPB65R190CFDA

650V、N 通道、最大 190 mΩ、汽车 MOSFET、D2PAK、CoolMOS ™ CFDA

650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provide • First 650V automotive qualified technology with integrated fast body diode on the market\n• Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt\n• Low gate charge value Q g\n• Low Q rr at repetitive commutation on body diode & low Q oss\n• Reduced turn on and turn of ;

Infineon

英飞凌

IPB65R190CFDA

Metal Oxide Semiconductor Field Effect Transistor

文件:2.19785 Mbytes 页数:16 Pages

INFINEON

英飞凌

IPI65R190CFD

Metal Oxide Semiconduvtor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Applic

文件:6.53687 Mbytes 页数:20 Pages

INFINEON

英飞凌

IPI65R190CFD

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Applic

文件:3.83053 Mbytes 页数:20 Pages

INFINEON

英飞凌

IPI65R190CFD

650V CoolMOS C6 CFD POWER Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Applic

文件:6.53687 Mbytes 页数:20 Pages

INFINEON

英飞凌

技术参数

  • OPN:

    IPB65R190CFDAATMA1

  • Qualification:

    Automotive

  • Package name:

    PG-TO263-3

  • VDS max:

    650 V

  • RDS (on) @10V max:

    190 mΩ

  • ID @25°C max:

    17.5 A

  • QG typ @10V:

    68 nC

  • Special Features:

    automotive

  • Polarity:

    N

  • VGS(th) min:

    3.5 V

  • VGS(th) max:

    4.5 V

  • Technology:

    CoolMOS™ CFDA

供应商型号品牌批号封装库存备注价格
Infineon(英飞凌)
24+
标准封装
9225
原厂渠道供应,大量现货,原型号开票。
询价
INFINEON
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
Infineon(英飞凌)
25+
TO-263
21000
原装正品现货,原厂订货,可支持含税原型号开票。
询价
INFINE0N
21+
D2PAK (TO-263)
32568
100%进口原装!长期供应!绝对优势价格(诚信经营
询价
Infineon(英飞凌)
2447
PG-TO263
115000
1000个/圆盘一级代理专营品牌!原装正品,优势现货,
询价
INFINEON/英飞凌
23+
PG-TO263-3
50000
全新原装正品现货,支持订货
询价
Infineon/英飞凌
2021+
PG-TO263
9600
原装现货,欢迎询价
询价
Infineon/英飞凌
25+
PG-TO263
25000
原装正品,假一赔十!
询价
Infineon/英飞凌
24+
PG-TO263
6000
全新原装深圳仓库现货有单必成
询价
Infineon/英飞凌
21+
PG-TO263
6820
只做原装,质量保证
询价
更多IPB65R190CFDA供应商 更新时间2026-1-27 23:00:00