丝印：65A190F7；Package：PG-TO220-3；650V CoolMOSª CFD7A SJ Power Device

Features • Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Qrr • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • 100 avalanche tested • Best-in-class RDS(on) in SMD and THD packages

文件：1.73828 Mbytes 页数：14 Pages

Infineon

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650V CoolMOS™ N 沟道汽车级SJ 功率 MOSFET CFD7A

\n优势:\n• 在满足汽车寿命要求方面具有行业最高可靠性\n• 实现更高功率密度设计\n• 可扩展设计用于 PFC 和 DC-DC 级\n• 提供丰富的产品组合;

Infineon

英飞凌

650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS(on) dependency over temperature Benefits • Excellent hard commutation ruggedness • Extra safety margin for designs with increased bus voltage • Enabling increased powe

文件：1.48589 Mbytes 页数：14 Pages

Infineon

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650V CoolMOS짧 CFD7A SJ Power Device

MOSFET 650V CoolMOS™ CFD7A SJ Power Device 650V CoolMOS™ CFD7A is Infineons latest generation of market leading automotive qualified high voltage CoolMOS™ MOSFETs. Potential applications Suitable for PFC and DC-DC stages for: • Unidriectional and bidirectional DC-DC converters, • On-Board ba

文件：1.52198 Mbytes 页数：14 Pages

Infineon

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