丝印：037N08N；Package：PG-TO220-3；OptiMOS3 Power-Transistor

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified accordin

文件：1.026859 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：037N08N；Package：PG-TO220-3；OptiMOS™3 Power-Transistor

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified acc

文件：503.84 Kbytes 页数：11 Pages

INFINEON

英飞凌

OptiMOS™3 Power-Transistor

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified acc

文件：503.84 Kbytes 页数：11 Pages

INFINEON

英飞凌

isc N-Channel MOSFET Transistor

• DESCRITION • Device for use in a wide variety of applications • FEATURES • Low drain-source on-resistance: RDS(on) ≤3.7mΩ (max) • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：300.22 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：338.27 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

• DESCRITION • Device for use in a wide variety of applications • FEATURES • Low drain-source on-resistance: RDS(on) ≤3.7mΩ (max) • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：300.22 Kbytes 页数：2 Pages

ISC

无锡固电