丝印：029N13N6；Package：PG-HSOG-8；MOSFET OptiMOSTM 6 Power-Transistor, 135 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • 100 avalanche tested • 175°C operating temperature • Optimized for motor drives and battery powered applications • Pb-free lead pla

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