丝印：0302LS；Package：PG-TDSON-8；MOSFET OptiMOSTM 3 Power-Transistor, 120 V

Features • N-channel, logic level • 100 avalanche tested • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Ideal for high-frequency switching and synchronous rectification • Halogen-free

文件：1.77755 Mbytes 页数：13 Pages

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