FDMA1032CZ

Marking：032；Package：MicroFET；20V Complementary PowerTrench MOSFET

IPA032N06N3G

Marking：032N06N；Package：PG-TO220-3-31；OptiMOSTM3 Power-Transistor

Features •Idealforhighfrequencyswitchingandsync.rec. •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •Qualifiedaccordin

ISC032N12LM6

Marking：032N12L6；Package：PG-TDSON-8FL；MOSFET OptiMOSTM 6 Power-Transistor, 120 V

Features •N-channel,logiclevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Optimizedforhighfrequencyswitchingandsynchronousrectification •

PSMB032N08NS1

Marking：032N08NS；Package：TO-263；80V N-Channel Enhancement Mode MOSFET

Feature: RDS(ON)Max,VGS@10V,ID@50A

PSMP032N08NS1

Marking：032N08NS；Package：TO-220AB-L；80V N-Channel Enhancement Mode MOSFET

Feature: RDS(ON)Max,VGS@10V,ID@50A

IPB032N10N5

Marking：032N10N5；Package：PG-TO263-7；OptiMOS짧 5 Power-Transistor, 100 V