| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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Marking：039INBB；Package：CCPAK1212；650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package 1.Generaldescription TheGAN039-650NBBisa650V,33mΩGalliumNitride(GaN)FETinaCCPAK1212package.It isanormally-offdevicethatcombinesNexperia’slatesthigh-voltageGaNHEMTH2technology andlow-voltagesiliconMOSFETtechnologies—offeringsuperiorreliabilityandperformanc | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Marking：039INBBX；Package：SOT8000；650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package 1.Generaldescription TheGAN039-650NBBisa650V,33mΩGalliumNitride(GaN)FETinaCCPAK1212package.It isanormally-offdevicethatcombinesNexperia’slatesthigh-voltageGaNHEMTH2technology andlow-voltagesiliconMOSFETtechnologies—offeringsuperiorreliabilityandperformanc | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Marking：039INBBA；Package：SOT8000；650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package 1.Generaldescription TheGAN039-650NBBAisanAutomotivequalified650V,33mΩGalliumNitride(GaN)FETina CCPAK1212package.Itisanormally-offdevicethatcombinesNexperia’slatesthigh-voltageGaN HEMTH2technologyandlow-voltagesiliconMOSFETtechnologies—offeringsuperiorrel | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA |
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