丝印：03P30；Package：DFN1006-3；P-Channel Enhancement Mode Power MOSFET

Description The RM03P30D1E uses advanced trench technology to provide excellent RDS(ON). General Features VDS =- 30V,I D =- 0.3A RDS(ON)

文件：202.17 Kbytes 页数：9 Pages

RECTRON

丽正国际

丝印：03P30；Package：SOT23；P-Channel Enhancement Mode Power MOSFET

Description The RM03P30S2E uses advanced trench technology to provide excellent RDS(ON). General Features VDS =- 30V,I D =- 0.3A RDS(ON)

文件：207.54 Kbytes 页数：9 Pages

RECTRON

丽正国际