丝印：040TO65G3；Silicon carbide Power MOSFET 650 V, 40 mΩ typ., 35 A in a TO-LL package

Features • Very fast and robust intrinsic body diode • Very low RDS(on) over the entire temperature range • High speed switching performances • Source sensing pin for increased efficiency Applications • Switching mode power supply • DC-DC converters Description This silicon carbide Po

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STMICROELECTRONICS

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