| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Marking：041N12N；Package：PG-TO262-3；N-channel, normal level Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant,halogenfree •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitch | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：041N12N；Package：PG-TO220-3；N-channel, normal level Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant,halogenfree •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitch | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：041N12N；Package：PG-TO220-3；OptiMOSTM3 Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：041N12N；Package：PG-TO262-3；OptiMOSTM3 Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
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