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FDP045N10A

Marking:045N10A;Package:TO-220;100 V N-Channel MOSFET

•Fastswitchingspeed •Lowgatecharge,QG=54nC(typical) •Highperformancechanneltechnologycanachieveverylow RDS(on). •Highpowerandhighcurrenthandlingcapacity •MeetRoHSstandards •VDS=100V •ID(atVGS=10V)=100A •RDS(ON)(atVGS=10V)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

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