ASD05C

Marking：05；Package：SOD-323；1-Line Bi-directional TVS Diode

Features 500Wpeakpulsepower(8/20μs) Protectsonedataorpowerline Ultralowleakage:nAlevel Operatingvoltage:3.3V，5V,8V,12V,15V,24V, 36V,40V Ultralowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV C

DTC124TU3HZG

Marking：05；Package：SOT-323；NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor)

Features 1)Built-InBiasingResistors,R1=22kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigneasy. 4)Compl

ESD05V88D-CBP

Marking：05；Package：DFN1006；Transient Voltage Suppressors for ESD Protection

Features 147~162WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsoneI/Oline(Bidirectional) Lowclampingvoltage Workingvoltages:5V~12V Lowleakagecurrent IEC61000-4-2(ESD)±15kV(air),±8kV(contact) IEC61000-4-4(EFT)40A(5/50ηs) Applications CellPhoneHandsetsandAc

ESD5Z5V0

Marking：05；Package：SOD-523；Transient Voltage Suppressors

◆-CARforautomotiveandotherapplicationsrequiringuniquesiteand controlchangerequirements;AEC-Q101qualifiedandPPAPcapable Features ◆150Wattspeakpulsepower(tp=8/20μs) ◆Transientprotectionforhighspeeddatalinesto IEC61000-4-2(ESD)±15kV(air),±8kV(contact) IEC6

ESD5Z5V0

Marking：05；Package：SOD-523；Transient Voltage Suppressors

Features ◆150Wattspeakpulsepower(tp=8/20μs) ◆Transientprotectionforhighspeeddatalinesto IEC61000-4-2(ESD)±15kV(air),±8kV(contact) IEC61000-4-4(EFT)40A(5/50ns) ◆ProtectsOnePowerorI/OPort ◆Lowleakagecurrent ◆Lowoperatingandclampingvoltages ◆Solid-stat

PDTA124EE

Marking：05；Package：SC-75；PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

Featuresandbenefits *100mAoutputcurrentcapability *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts *AEC-Q101qualified

PDTA124EE

Marking：05；Package：SOT-416；PNP resistor-equipped transistors; R1 = 22 k廓, R2 = 22 k廓

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplifi

PDTA124EE

Marking：05；Package：SOT-416；PNP resistor-equipped transistor

DESCRIPTION PNPresistor-equippedtransistorinanSC-75plasticpackage. NPNcomplement:PDTC124EE. FEATURES •Built-inbiasresistorsR1andR2 (typ.22kΩeach) •Simplificationofcircuitdesign •Reducesnumberofcomponents andboardspace. APPLICATIONS •Especiallysuitable

PDTA124ET

Marking：05；Package：SOT23；PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

Featuresandbenefits *100mAoutputcurrentcapability *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts *AEC-Q101qualified

PDTA124ET-Q

Marking：05；Package：SOT23；50 V, 100 mA PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ

1.Generaldescription PNPResistor-EquippedTransistor(RET)inasmallSOT23(TO-236AB)Surface-MountedDevice (SMD)plasticpackage. NPNcomplement:PDTC124ET-Q 2.Featuresandbenefits •100mAoutputcurrentcapability •Built-inbiasresistors •Simplifiescircuitdesign •Reduces