丝印：05；Package：SOD-323；1-Line Bi-directional TVS Diode

Features  500W peak pulse power (8/20μs)  Protects one data or power line  Ultra low leakage: nA level  Operating voltage: 3.3V，5V, 8V, 12V, 15V, 24V, 36V, 40V  Ultra low clamping voltage  Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV C

文件：2.01557 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：05；Package：SOT-323；NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor)

Features 1) Built-In Biasing Resistors, R1 = 22kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Compl

文件：1.25792 Mbytes 页数：7 Pages

ROHM

罗姆

丝印：05；Package：DFN1006；Transient Voltage Suppressors for ESD Protection

Features 147 ~ 162 Watts Peak Pulse Power per Line (tp=8/20μs) Protects one I/O line (Bidirectional) Low clamping voltage Working voltages: 5V ~ 12V Low leakage current IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC61000-4-4 (EFT) 40A (5/50ηs) Applications Cell Phone Handsets and Ac

文件：2.62452 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：05；Package：SOD-523；Transient Voltage Suppressors

◆ -CAR for automotive and other applications requiring unique site and control change requirements;AEC-Q101 qualified and PPAP capable Features ◆ 150 Watts peak pulse power (tp = 8/20μs) ◆ Transient protection for high speed data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 6

文件：171.76 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：05；Package：SOD-523；Transient Voltage Suppressors

Features ◆ 150 Watts peak pulse power (tp = 8/20μs) ◆ Transient protection for high speed data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns) ◆ Protects One Power or I/O Port ◆ Low leakage current ◆ Low operating and clamping voltages ◆ Solid-stat

文件：589.83 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：05；Package：SC-75；PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

Features and benefits * 100 mA output current capability * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs * AEC-Q101 qualified

文件：1.05552 Mbytes 页数：18 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：05；Package：SOT-416；PNP resistor-equipped transistor

DESCRIPTION PNP resistor-equipped transistor in an SC-75 plastic package. NPN complement: PDTC124EE. FEATURES • Built-in bias resistors R1 and R2 (typ. 22 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable

文件：66.49 Kbytes 页数：8 Pages

PHI

飞利浦

丝印：05；Package：SOT-416；PNP resistor-equipped transistors; R1 = 22 k廓, R2 = 22 k廓

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning”for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplifi

文件：181.64 Kbytes 页数：14 Pages

恩XP

丝印：05；Package：SOT23；PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

Features and benefits * 100 mA output current capability * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs * AEC-Q101 qualified

文件：1.05552 Mbytes 页数：18 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：05；Package：SOT23；50 V, 100 mA PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ

1. General description PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC124ET-Q 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces

文件：215.27 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司