| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Marking：050N10NS；Package：PG-TO263-3；StrongIRFETTM 2 Power-Transistor Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：050N10NS；Package：PG-TO263-7；StrongIRFETTM 2 Power-Transistor Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：050N10NS；Package：PG-TO220-3；StrongIRFETTM2Power-Transistor Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：050N10NS；Package：TO-263；100V N-Channel Enhancement Mode MOSFET Feature RDS(ON),max | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
Marking：050N10NS；Package：TO-220AB-L；100V N-Channel Enhancement Mode MOSFET Feature RDS(ON),max | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT |
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