丝印：050N10NS；Package：PG-TO263-3；StrongIRFETTM 2 Power-Transistor

Features • Optimized for a wide range of applications • N-Channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：972.91 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：050N10NS；Package：PG-TO263-7；StrongIRFETTM 2 Power-Transistor

Features • Optimized for a wide range of applications • N-Channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：966.08 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：050N10NS；Package：PG-TO220-3；StrongIRFETTM2Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.07343 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：050N10NS；Package：TO-263；100V N-Channel Enhancement Mode MOSFET

Feature  RDS(ON),max

文件：779.14 Kbytes 页数：7 Pages

PANJIT

強茂

丝印：050N10NS；Package：TO-220AB-L；100V N-Channel Enhancement Mode MOSFET

Feature  RDS(ON),max

文件：686.6 Kbytes 页数：7 Pages

PANJIT

強茂