056

型号：ZXTP25100BFH；Package：SOT-23；100V, SOT23, PNP medium power transistor

Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip

056N03F

型号：ISZ056N03LF2S；Package：PG-TSDSON-8；MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V

Features •Optimizedforwiderangeofapplications •N‑channel,logiclevel •100%avalanchetested •175°Crated •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21

0564

型号：SMS05CC；Package：SOT-26；4-Line Bi-direction TVS Diode Array

Features ●Protectsupto5lines ●Lowleakage:nAlevel ●Lowclampingvoltage ●Excellentsurgeprotection(80Wat8/20μs) ●Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-4(EFT)40A(

0564P

型号：RClamp0564P.TNT；Package：SGP2010N5；4-Line, 170fF ESD Protection