丝印：050P03N；Package：PDFNWB5x6-8L；P -CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF050P03N combines advanced trench MOSFETtechnology with a low resistance package to provide extremely low RDS(ON). ● Features Advance high cell density Trench technology Low RDS(ON) to minimize conductive loss Low Gate Charge for fast switching Low Thermal resist

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