丝印：052；Package：TDFN-2X2-8AL；Linear Regulation Battery Charger

GENERAL DESCRIPTION The SGM41566 is designed for charging low capacity battery cell with factory-programmable current programmable in the range of 50mA to 750mA from loosen regulated power source. The device features low drop-out constant-current constant-voltage charging, weak battery pre-

文件：961.77 Kbytes 页数：21 Pages

SGMICRO

圣邦股份

丝印：052AI01L；Package：TSSOP；2-Bit, 2:1, Single-Ended Multiplexer

Features • 2-bit, 2:1 single-ended multiplexer • Nominal output impedance: 15 (VDDO = 3.3V) • Maximum output frequency: 250MHz • Propagation delay: 3ns (maximum), VDD = VDDO = 3.3V • Input skew: 85ps (maximum), VDD = VDDO = 3.3V • Part-to-part skew: 500ps (maximum), VDD = VDDO = 3.3V • Out

文件：509.37 Kbytes 页数：16 Pages

RENESAS

瑞萨

丝印：052AI01L；Package：TSSOP；2-Bit, 2:1, Single-Ended Multiplexer

Features • 2-bit, 2:1 single-ended multiplexer • Nominal output impedance: 15 (VDDO = 3.3V) • Maximum output frequency: 250MHz • Propagation delay: 3ns (maximum), VDD = VDDO = 3.3V • Input skew: 85ps (maximum), VDD = VDDO = 3.3V • Part-to-part skew: 500ps (maximum), VDD = VDDO = 3.3V • Out

文件：509.37 Kbytes 页数：16 Pages

RENESAS

瑞萨

丝印：0522P；Package：DFN1610-6L；Ultra Low Capacitance ESD Protection Array

FEATURES ■ Transient protection for high-speed data lines IEC 61000-4-2(ESD) ±15KV(Air) ±8KV(Contact) IEC 61000-4-4(EFT)40A(5/50ns) Cable Discharge Event(CDE) ■ Package optimized for high-speed lines ■ Protects two I/O lines ■ Ultra Low capacitance:0.2pf (typical between I/O channel) ■ L

文件：813.01 Kbytes 页数：4 Pages

UMW

友台半导体

丝印：0522P；Package：DFN1610-6L；Ultra Low Capacitance ESD Protection Array

DESCRIPTION ESD0522P is an ultra-low capacitance Transient Voltage Suppressor (TVS) designed to protection for high-speed data interfaces. With typical capacitance of 0.2pF (I/O to I/O) only, ESD0522P is designed to protect parasitic-sensitive systems against over-voltage and over-current t

文件：810.28 Kbytes 页数：4 Pages

EVVOSEMI

翊欧

丝印：0522P；Package：DFN1610-6；Low Capacitance TVS Diode |

Features © Ultra small package: 1.6x1.0x0.5mm Ultra low capacitance: 0.3 pF typical (io to i0) Ultra low leakage: nA level © Low operating voltage: 5v © Low clamping voltage ® IEC 61000-4-2 (ESD) immunity test Air discharge: £25kV Contact discharge: +20kV ~IEC61000-4-5 (Lightning) 4A (872

文件：341.41 Kbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：0524P；Package：DFN2510；DFN2510 ESD Protection Devices ROHS

FEATURES UItra Iow capacitance：0.3pF typical（I/O to I/O) UItra Iow Ieakage：nA level Low operating voltage：5V Low clamping voltage Up to 4 date lines and one power line protects Complies with following standards -IEC 61000-4-2（ESD）immunity test Air discharge:±25kv Contact discharge：±20kv

文件：796.35 Kbytes 页数：4 Pages

EVVOSEMI

翊欧

丝印：0524P；Package：DFN2510；High Definition Multi-Media Interface (HDMI)

FEATURES UItra Iow capacitance：0.3pF typical（I/O to I/O) UItra Iow Ieakage：nA level Low operating voltage：5V Low clamping voltage Up to 4 date lines and one power line protects Complies with following standards -IEC 61000-4-2（ESD）immunity test Air discharge:±25kv Contact discharge：±20kv

文件：849.9 Kbytes 页数：4 Pages

UMW

友台半导体

丝印：0524P；Package：DFN2510-10L；Plastic-Encapsulate Diodes

DESCRIPTION Designed to protect voltage sensitive electronic components from ESD and other transients. Excellent clamping capability, low leakage, low capacitance, and fast response time provide best in class protection on designs that are exposed to ESD. The combination of small size, low cap

文件：359.38 Kbytes 页数：5 Pages

GWSEMI

唯圣电子

丝印：052N085S；Package：PG-TO220；OptiMOSTM 5 Power-Transistor, 80 V

Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.07876 Mbytes 页数：10 Pages

Infineon

英飞凌