丝印：055TO65G3；Package：TO-LL；Silicon carbide Power MOSFET 650 V, 58 mΩ typ., 30 A in a TO-LL package

Features • Very fast and robust intrinsic body diode • Very low RDS(on) over the entire temperature range • High speed switching performances • Source sensing pin for increased efficiency Applications • Switching mode power supply • DC-DC converters

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STMICROELECTRONICS

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