丝印：057N08N；Package：PG-TO220-FP；Metal Oxide Semiconductor Field Effect Transistor

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applicatio

文件：598.19 Kbytes 页数：10 Pages

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丝印：057N08NS；Package：TDSON-8；OptiMOS3 Power-Transistor

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS

文件：328.28 Kbytes 页数：9 Pages

Infineon

英飞凌

Metal Oxide Semiconductor Field Effect Transistor

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applicatio

文件：598.19 Kbytes 页数：10 Pages

Infineon

英飞凌

OptiMOS3 Power-Transistor

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS

文件：328.28 Kbytes 页数：9 Pages

Infineon

英飞凌