丝印：057N08N；Package：PG-TO220-FP；Metal Oxide Semiconductor Field Effect Transistor

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applicatio

文件：598.19 Kbytes 页数：10 Pages

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OptiMOS(TM)3 Power-Transistor

文件：286.02 Kbytes 页数：9 Pages

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Metal Oxide Semiconductor Field Effect Transistor

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applicatio

文件：598.19 Kbytes 页数：10 Pages

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OptiMOS3 Power-Transistor

文件：1.02844 Mbytes 页数：11 Pages

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OptiMOS3 Power-Transistor

文件：1.02844 Mbytes 页数：11 Pages

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OptiMOS 3 Power-Transistor Features N-channel, normal level

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：526.21 Kbytes 页数：11 Pages

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