IPA60R600P6

Metal Oxide Semiconductor Field Effect Transistor

600VCoolMOS™P6PowerTransistor Applications   PFCstages,hardswitchingPWMstagesandresonantswitchingstages   fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom   andUPS.

IPA60R600P6

Isc N-Channel MOSFET Transistor

•FEATURES •WithTO-220FPackage •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplicatio

IPA60R600P6

Metal Oxide Semiconductor Field Effect Transistor

IPA60R600P6_15

Metal Oxide Semiconductor Field Effect Transistor

IPB60R600P6

MetalOxideSemiconductorFieldEffectTransistor

600VCoolMOS™P6PowerTransistor Applications   PFCstages,hardswitchingPWMstagesandresonantswitchingstages   fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom   andUPS.

IPB60R600P6

MetalOxideSemiconductorFieldEffectTransistor

IPB60R600P6

IscN-ChannelMOSFETTransistor

•FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

IPD60R600P6

N-ChannelMOSFETTransistor

•DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

IPD60R600P6

MetalOxideSemiconductorFieldEffectTransistor

600VCoolMOS™P6PowerTransistor Applications   PFCstages,hardswitchingPWMstagesandresonantswitchingstages   fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom   andUPS.

IPP60R600P6

N-ChannelMOSFETTransistor

•DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdev