首页 >IPA90R1K2C3>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IPA90R1K2C3 | CoolMOS Power Transistor Features •Lowestfigure-of-meritRONxQg •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge CoolMOS™900Visdesignedfor: •QuasiResonantFlyback/Forwardtopologi | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | |
IPA90R1K2C3 | N-Channel MOSFET Transistor •DESCRIPTION •Highpeakcurrentcapability •Ultralowgatecharge •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤1.2Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
N-ChannelMOSFETTransistor •DESCRIPTION •Highpeakcurrentcapability •Ultralowgatecharge •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤1.2Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤1.2Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor DESCRITION •Highpeakcurrentcapability FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.2Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤1.2Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOSPowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistor Features •Lowestfigure-of-meritRONxQg •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge CoolMOS™900Visdesignedfor: •QuasiResonantFlyback/Forwardtopologi | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistor Features •Lowestfigure-of-meritRONxQg •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge CoolMOS™900Visdesignedfor: •QuasiResonantFlyback/Forwardtopologi | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor DESCRITION •Highpeakcurrentcapability FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.2Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
详细参数
- 型号：
IPA90R1K2C3
- 功能描述：
MOSFET COOL MOS N-CHANNEL 900V 5.1A
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon |
16+/17+ |
TO-220 |
3500 |
原装正品现货供应56 |
询价 | ||
INFINEON/英飞凌 |
24+ |
TO-220F |
4685 |
只做原厂渠道 可追溯货源 |
询价 | ||
INFINEON/英飞凌 |
2021+ |
TO-220 |
9000 |
原装现货,随时欢迎询价 |
询价 | ||
英飞凌 |
15+16+ |
TO-220F |
14650 |
只做原装正品 |
询价 | ||
Infineon(英飞凌) |
24+ |
TO-220F |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
INFINEON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
INFINEON/英飞凌 |
11+18+19+ |
TO-220F |
464 |
原装进口无铅现货 |
询价 | ||
INFINEON |
24+ |
PG-TO220-3 |
8866 |
询价 | |||
INF |
24+ |
TO-220F |
5000 |
只做原装公司现货 |
询价 | ||
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
询价 |
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相关库存
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