丝印：9R1K2C；Package：PG-TO252；CoolMOS™ Power Transistor

Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Fully qualified according to JEDEC for Industrial Applications • Pb-free lead plating; RoHS compliant,available in Halogen free mold compound • Ultra low gate charge

文件：368.95 Kbytes 页数：10 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤1.2Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：336.43 Kbytes 页数：2 Pages

ISC

无锡固电

CoolMOS Power Transistor

文件：303.44 Kbytes 页数：10 Pages

Infineon

英飞凌

500V-900V CoolMOS™ N-Channel Power MOSFET

Replacement for CoolMOS™ C3 is CoolMOS™ P7\n 900V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the \"working horse\" of the portfolio. • Low specific on-state resistance (RDS(on)*A)\n• Very low energy storage in output capacitance (Eoss) @400V\n• Low gate charge (Qg)\n• Fieldproven CoolMOS™ quality\n• CoolMOS™ technology has been manufactured by Infineon since 1998\n\n优势:\n• High efficiency and power density\n• Outstanding cost/per;

Infineon

英飞凌

CoolMOS™ Power Transistor

Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Fully qualified according to JEDEC for Industrial Applications • Pb-free lead plating; RoHS compliant,available in Halogen free mold compound • Ultra low gate charge

文件：368.95 Kbytes 页数：10 Pages

Infineon

英飞凌

CoolMOS™ Power Transistor

Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Fully qualified according to JEDEC for Industrial Applications • Pb-free lead plating; RoHS compliant,available in Halogen free mold compound • Ultra low gate charge

文件：368.95 Kbytes 页数：10 Pages

Infineon

英飞凌