首页 >IPA60R190P6>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IPA60R190P6 | Isc N-Channel MOSFET Transistor •FEATURES •DrainSourceVoltage- :VDSS=500V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IPA60R190P6 | Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Theoffereddevicesprovideallbenefitsofafastsw | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | |
IPA60R190P6 | Metal Oxide Semiconductor Field Effect Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
Metal Oxide Semiconductor Field Effect Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.19Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustde | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤190mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Theoffereddevicesprovideallbenefitsofafastsw | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
IscN-ChannelMOSFETTransistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
MaterialContentDataSheet | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.19Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustde | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
MetalOxideSemiconductorFieldEffectTransistor 600VCoolMOS™P6PowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhigh | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Theoffereddevicesprovideallbenefitsofafastsw | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤190mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
MetalOxideSemiconductorFieldEffectTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Theoffereddevicesprovideallbenefitsofafastsw | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Theoffereddevicesprovideallbenefitsofafastsw | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |
详细参数
- 型号：
IPA60R190P6
- 功能描述：
MOSFET 600V CoolMOS P6 MOSFET 190 Rds
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2020+ |
TO-220 |
22000 |
全新原装正品 现货库存 价格优势 |
询价 | ||
INFINEON |
22+ |
TO-247 |
52000 |
原装正品 |
询价 | ||
INFINEON/英飞凌 |
21+ |
TO-220 |
20000 |
原装现货假一罚十 |
询价 | ||
INFINEON |
21+ |
TO-220F |
26000 |
实单请给接受价 |
询价 | ||
INFINEON |
22+ |
2000 |
INFINEON原装原厂渠道 |
询价 | |||
INFINEON |
21+ |
TO-220F |
120000 |
杜绝假货,只做原装正品,可开增税 |
询价 | ||
INFINEO |
16+ |
TO-220 |
6233 |
全新原装/深圳现货库2 |
询价 | ||
INFINEON/英飞凌 |
23+ |
TO-220 |
280000 |
询价 | |||
Infineon/英飞凌 |
2018+ |
TO-220 |
9000 |
原装正品现货,可开13点税 |
询价 | ||
INFINEON/英飞凌 |
2021+ |
PG-TO220 |
18360 |
原装进口假一罚十 |
询价 |
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