7448991047

Marking：047；WE-MCRI SMT Molded Coupled Inductor

GeneralInformation: AmbientTemperature(referring toIR)-40upto+85°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

TLV61047DDCR

Marking：047；Package：SOT-23-THIN；TLV61047 20VIN, 28VOUT, 2.2A Non-synchronous Boost Converter

1Features •Inputvoltagerange:2.6Vto20V •Outputvoltagerange:4.5Vto28V •Integratedlow-sideFET:200mΩ •Highefficiency –Upto91.2%efficiencyatVIN=5VtoVOUT= 12V,andIOUT=0.2A –Upto91.7%efficiencyatVIN=12VtoVOUT= 28V,andIOUT=0.3A •2.2Apeak

BSC047N08NS3G

Marking：047N08NS；Package：TDSON-8；OptiMOSTM3 Power-Transistor

Features •Idealforhighfrequencyswitchingandsync.rec. •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHS

IPD047N03LF2S

Marking：047N03F2；Package：PG-TO252-3；MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V

Features •Optimizedforawiderangeofapplications •N‑channel,logiclevel •100%avalanchetested •175°Crated •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21

IPT047N15NM6

Marking：047N15N6；Package：PG-HSOF-8；MOSFET OptiMOS™ 6 Power‑Transistor, 150 V

Features •N‑channel,normallevel •Verylowon‑resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21 •MSL1classifiedaccordingtoJ‑STD‑020

BSC047N08NS3G

Marking：047N08NS；Package：TDSON-8；OptiMOS3 Power-Transistor