丝印：040TO65G3；Silicon carbide Power MOSFET 650 V, 40 mΩ typ., 35 A in a TO-LL package

Features • Very fast and robust intrinsic body diode • Very low RDS(on) over the entire temperature range • High speed switching performances • Source sensing pin for increased efficiency Applications • Switching mode power supply • DC-DC converters Description This silicon carbide Po

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STMICROELECTRONICS

意法半导体

Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application p • Very fast and robust intrinsic body diode \n• Very low RDS(on) over the entire temperature range \n• High speed switching performances \n• Source sensing pin for increased efficiency;

ST

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VQFN-11

SCT/芯洲科技

上传：深圳市宇创芯科技有限公司

DFN-20-EP(3.5x4.5)

SCT/芯洲科技

上传：深圳市宇创芯科技有限公司

DFN-20-EP

SCT/芯洲科技

上传：深圳市宇创芯科技有限公司