SCT040TO65G3中文资料意法半导体数据手册PDF规格书

厂商型号	SCT040TO65G3
功能描述	Silicon carbide Power MOSFET 650 V, 40 mΩ typ., 35 A in a TO-LL package
丝印标识	040TO65G3
文件大小	1.52722 Mbytes
页面数量	15 页
生产厂商	STMICROELECTRONICS
中文名称	意法半导体
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-11-15 16:30:00
人工找货	SCT040TO65G3价格和库存，欢迎联系客服免费人工找货

特性 Features

• Very fast and robust intrinsic body diode

• Very low RDS(on) over the entire temperature range

• High speed switching performances

• Source sensing pin for increased efficiency

Applications

• Switching mode power supply

• DC-DC converters

描述 Description

This silicon carbide Power MOSFET device has been developed using ST’s

advanced and innovative 3rd generation SiC MOSFET technology. The device

features a very low RDS(on) over the entire temperature range combined with low

capacitances and very high switching operations, which improve application

performance in frequency, energy efficiency, system size and weight reduction.