首页>SCT040H120G3AG>规格书详情
SCT040H120G3AG中文资料意法半导体数据手册PDF规格书
| 厂商型号 |
SCT040H120G3AG |
| 功能描述 | Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package |
| 丝印标识 | |
| 封装外壳 | H2PAK-7 |
| 文件大小 |
386.35 Kbytes |
| 页面数量 |
14 页 |
| 生产厂商 | STMICROELECTRONICS |
| 中文名称 | 意法半导体 |
| 网址 | |
| 数据手册 | |
| 更新时间 | 2025-11-15 16:30:00 |
| 人工找货 | SCT040H120G3AG价格和库存，欢迎联系客服免费人工找货 |
SCT040H120G3AG规格书详情
特性 Features
• AEC-Q101 qualified
• Very low RDS(on) over the entire temperature range
• High speed switching performances
• Very fast and robust intrinsic body diode
• Source sensing pin for increased efficiency
Applications
• Main inverter (electric traction)
• DC/DC converter for EV/HEV
• On board charger (OBC)
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 3rd generation SiC MOSFET technology. The device
features a very low RDS(on) over the entire temperature range combined with
low capacitances and very high switching operations, which improve application
performance in frequency, energy efficiency, system size and weight reduction.
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
100 |
询价 | |||||
STMicroelectronics |
24+ |
原厂封装 |
12634 |
有挂就有货只做原装正品 |
询价 | ||
STMicroelectronics |
23+ |
SMD |
3652 |
原厂正品现货供应SIC全系列 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
ST |
22+ |
N/A |
17000 |
只做原装正品 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
询价 | |||
ST(意法) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
ST(意法) |
23+ |
10000 |
只做全新原装,实单来 |
询价 | |||
ST |
22+ |
BGA |
1000 |
原装正品碳化硅 |
询价 | ||
ST |
124201 |
只做正品 |
询价 |
