| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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Marking：0410PAB；Package：SOT669；40 V, 10 A PNP high power bipolar transistor 1.Generaldescription PNPhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-Mounted Device(SMD)powerplasticpackage. NPNcomplement:PHPT60410NY 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Suitableforhightemperatureapplicationsupto175°C •Red | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Marking：0410PAB；Package：SOT669；40 V, 10 A PNP high power bipolar transistor 1.Generaldescription PNPhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice(SMD)power plasticpackage. NPNcomplement:PHPT60410NY-Q 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Suitableforhightemperatureapplicationsupto175°C • | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA |
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