PHPT60410PY-Q

Marking：0410PAB；Package：SOT669；40 V, 10 A PNP high power bipolar transistor

1.Generaldescription PNPhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice(SMD)power plasticpackage. NPNcomplement:PHPT60410NY-Q 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Suitableforhightemperatureapplicationsupto175°C •

LMR60410

LMR604103Vto36V,1A,Synchronous,BuckConverterOptimizedforHighPowerDensity,LowEMI,andLowOutputCapacitance

1Features •FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign •Wideoperatinginputvoltage:3Vto36V(42V absolutemaximum) •Pinprogrammableoutputvoltageoptionsavailable infixed3.3V/ADJand5V/ADJ –Adjustableoutputvoltagerangefrom1

PHPT60410NY

40V,10ANPNhighpowerbipolartransistor

1.Generaldescription NPNhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-Mounted Device(SMD)powerplasticpackage. PNPcomplement:PHPT60410PY 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Hightemperatureapplicationsupto175°C •ReducedPrinted

PHPT60410NY-Q

40V,10ANPNhighpowerbipolartransistor

1.Generaldescription NPNhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice(SMD)power plasticpackage. PNPcomplement:PHPT60410PY-Q 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Hightemperatureapplicationsupto175°C •ReducedPrin

PHPT60410PY

40V,10APNPhighpowerbipolartransistor

1.Generaldescription PNPhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-Mounted Device(SMD)powerplasticpackage. NPNcomplement:PHPT60410NY 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Suitableforhightemperatureapplicationsupto175°C •Red