丝印：0410PAB；Package：SOT669；40 V, 10 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60410NY-Q 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C •

文件：295.62 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

40 V, 10 A PNP high power bipolar transistor

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.\n NPN complement: PHPT60410NY-Q

Nexperia

安世

LMR60410 3V to 36V, 1A, Synchronous, Buck Converter Optimized for High Power Density, Low EMI, and Low Output Capacitance

1 Features • Functional Safety-Capable – Documentation available to aid functional safety system design • Wide operating input voltage: 3V to 36V (42V absolute maximum) • Pin programmable output voltage options available in fixed 3.3V/ADJ and 5V/ADJ – Adjustable output voltage range from 1

文件：1.67882 Mbytes 页数：38 Pages

TI

德州仪器

40 V, 10 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60410PY 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printed

文件：719.31 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司