丝印：0415NAB；Package：LFPAK56；40 V, 15 A NPN high power bipolar transistor

General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60415PY Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printed Circuit

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丝印：0415NAB；Package：SOT669；40 V, 15 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60415PY-Q 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Prin

文件：285.68 Kbytes 页数：14 Pages

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安世