丝印：040W65G3；Package：HiP247-4；Silicon carbide Power MOSFET 650 V, 45 mΩ typ., 30 A in an HiP247-4 package

Features • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Very high operating junction temperature capability (TJ = 200 °C) • Source sensing pin for increased efficiency Applications • Switching mode pow

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STMICROELECTRONICS

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