丝印：040N08NS；Package：PG-TDSON-8；Superior thermal resistance

Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.24004 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：040N08NS；Package：PG-TO263-3；StrongIRFETTM 2 Power-Transistor

Features • Optimized for a wide range of applications • N-Channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：968.9 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：040N08NS；Package：PG-TO252-3；StrongIRFETTM 2 Power-Transistor

Features • Optimized for a wide range of applications • N-Channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：920.08 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：040N08NS；Package：PG-TO220-3；StrongIRFETTM2Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.06372 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：040N08NS；Package：DFN5060-8L；80V N-Channel Enhancement Mode MOSFET

Feature  RDS(ON)

文件：704.15 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：040N08NS；Package：PG-TO220-3；StrongIRFETTM 2 Power-Transistor

文件：1.11335 Mbytes 页数：11 Pages

Infineon

英飞凌

Superior thermal resistance

Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.24004 Mbytes 页数：12 Pages

Infineon

英飞凌