丝印：040N08NS；Package：PG-TO263-3；StrongIRFETTM 2 Power-Transistor

Features • Optimized for a wide range of applications • N-Channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：968.9 Kbytes 页数：11 Pages

Infineon

英飞凌

StrongIRFET ™ 2 单 N 沟道功率 MOSFET 80 V，采用 D²PAK 封装

\n优势:\n• Multi-vendor compatibility\n• Right-fit products\n• Supports a wide variety of applications\n• Standard pinout allows for drop-in replacement\n• Increased current carrying capability;

Infineon

英飞凌

StrongIRFETTM 2 Power-Transistor

Features • Optimized for a wide range of applications • N-Channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：920.08 Kbytes 页数：11 Pages

Infineon

英飞凌

StrongIRFETTM2Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.06372 Mbytes 页数：11 Pages

Infineon

英飞凌

StrongIRFETTM 2 Power-Transistor

文件：1.11335 Mbytes 页数：11 Pages

Infineon

英飞凌