型号：PHPT60406NY-Q；Package：SOT669；40 V, 6 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60406PY-Q 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Prin

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：PHPT60406NY；Package：LFPAK56；40 V, 6 A NPN high power bipolar transistor

文件：723.53 Kbytes 页数：16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司