丝印：0406NAB；Package：LFPAK56；40 V, 6 A NPN high power bipolar transistor

文件：723.53 Kbytes 页数：16 Pages

NEXPERIA

安世

丝印：0406NAB；Package：SOT669；40 V, 6 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60406PY-Q 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Prin

文件：286.82 Kbytes 页数：14 Pages

NEXPERIA

安世

40 V, 6 A NPN high power bipolar transistor

NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.\n PNP complement: PHPT60406PY • High thermal power dissipation capability\n• High temperature applications up to 175 °C\n• Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK\n• High energy efficiency due to less heat generation\n• AEC-Q101 qualified.;

Nexperia

安世

40 V, 6 A NPN high power bipolar transistor

NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.\n PNP complement: PHPT60406PY-Q

Nexperia

安世

Package：SC-100，SOT-669；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 40V 6A LFPAK56 PWRSO8

Nexperia USA Inc.