丝印：039INTBX；Package：SOT8005；650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package

1. General description The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and

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