丝印：03N10；Package：SOT-89；N-Channel Enhancement Mode Power MOSFET

Features ⚫ High density cell design for ultra low RDS(on) ⚫ Excellent package for good heat dissipation ⚫ VDS= 100V,ID= 2A RDS(on)

文件：670.48 Kbytes 页数：5 Pages

HUIXIN

慧芯电子

丝印：03N10；Package：SOT-89；N-Channel MOSFET

文件：1.73287 Mbytes 页数：5 Pages

PJSEMI

平晶半导体

丝印：03N10T；Package：SOT-223；MOSFET

Features - Extremely low switching loss. - Excellent stability and uniformity.

文件：504.91 Kbytes 页数：6 Pages

COMCHIP

典琦