NVLJWD040N06CLTWG

Marking：040N；Package：WDFNW6；MOSFET - Power, Dual N-Channel 60 V, 38 m, 18 A

Features •SmallFootprintforCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •WettableFlanksProduct •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

AMDU040N014VRH

Marking：040N014；Package：PDFN56；Single N-channel Trench MOSFET 40V 1.4mΩ 194A

FEATURES •TrenchpowerMOSFETtechnology •N-channel,normallevel •Enhancedavalancheruggedness •100%Avalanchetested •Maximum175°Cjunctiontemperature •AEC-Q101qualified APPLICATIONS •DC/DCandAC/DCconverters •BrushedandBLDCmotordrivesystems

AMDU040N043VRH

Marking：040N043；Package：PDFN56；Single N-channel Trench MOSFET 40V 4.3mΩ 88A

FEATURES •TrenchpowerMOSFETtechnology •N-channel,normallevel •Enhancedavalancheruggedness •100%Avalanchetested •Maximum175°Cjunctiontemperature •AEC-Q101qualified APPLICATIONS •Switchingapplications •BrushedandBLDCMotordrivesystems

AMDUA040N070RH

Marking：040N070；Package：PDFN56-DUAL；Single N-channel Trench MOSFET 40V 7.0mΩ 35A

FEATURES •TrenchpowerMOSFETtechnology •N-channel,normallevel •100%Avalanchetested •Maximum175°Cjunctiontemperature •AEC-Q101qualified APPLICATIONS •Motorinverter •Switchingapplications

AMDV040N036LVRH

Marking：040N036L；Package：PDFN33；Automotive MOSFET 40V 3.6mΩ 80A

FEATURES •TrenchpowerMOSFETtechnology •SingleN-channeltrench,Logiclevel •Enhancedavalancheruggedness •100%Avalanchetested •Maximum175°Cjunctiontemperature •AEC-Q101qualifiedandPPAPcapable APPLICATIONS •Switchingapplications •Motordrivesystems

BSC040N08NS5

Marking：040N08NS；Package：PG-TDSON-8；Superior thermal resistance

Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IPA040N06N

Marking：040N06N；Package：PG-TO220-FP；Superior thermal resistance

Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IPB040N08NF2S

Marking：040N08NS；Package：PG-TO263-3；StrongIRFETTM 2 Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IPD040N03LF2S

Marking：040N03F2；Package：PG-TO252-3；MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V

Features •Optimizedforawiderangeofapplications •N‑channel,logiclevel •100%avalanchetested •175°Crated •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21

IPD040N08NF2S

Marking：040N08NS；Package：PG-TO252-3；StrongIRFETTM 2 Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21