丝印：040N；Package：WDFNW6；MOSFET - Power, Dual N-Channel 60 V, 38 m, 18 A

Features • Small Footprint for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：138.6 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：040N014；Package：PDFN56；Single N-channel Trench MOSFET 40V 1.4mΩ 194A

FEATURES • Trench power MOSFET technology • N-channel, normal level • Enhanced avalanche ruggedness • 100% Avalanche tested • Maximum 175°C junction temperature • AEC-Q101 qualified APPLICATIONS • DC/DC and AC/DC converters • Brushed and BLDC motor drive systems

文件：694.75 Kbytes 页数：7 Pages

MGCHIP

丝印：040N043；Package：PDFN56；Single N-channel Trench MOSFET 40V 4.3mΩ 88A

FEATURES • Trench power MOSFET technology • N-channel, normal level • Enhanced avalanche ruggedness • 100% Avalanche tested • Maximum 175°C junction temperature • AEC-Q101 qualified APPLICATIONS • Switching applications • Brushed and BLDC Motor drive systems

文件：604.17 Kbytes 页数：7 Pages

MGCHIP

丝印：040N070；Package：PDFN56-DUAL；Single N-channel Trench MOSFET 40V 7.0mΩ 35A

FEATURES • Trench power MOSFET technology • N-channel, normal level • 100% Avalanche tested • Maximum 175°C junction temperature • AEC-Q101 qualified APPLICATIONS • Motor inverter • Switching applications

文件：610.99 Kbytes 页数：7 Pages

MGCHIP

丝印：040N036L；Package：PDFN33；Automotive MOSFET 40V 3.6mΩ 80A

FEATURES • Trench power MOSFET technology • Single N-channel trench, Logic level • Enhanced avalanche ruggedness • 100% Avalanche tested • Maximum 175°C junction temperature • AEC-Q101 qualified and PPAP capable APPLICATIONS • Switching applications • Motor drive systems

文件：729.2 Kbytes 页数：8 Pages

MGCHIP

丝印：040N08NS；Package：PG-TDSON-8；Superior thermal resistance

Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.24004 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：040N06N；Package：PG-TO220-FP；Superior thermal resistance

Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.33413 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：040N08NS；Package：PG-TO263-3；StrongIRFETTM 2 Power-Transistor

Features • Optimized for a wide range of applications • N-Channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：968.9 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：040N03F2；Package：PG-TO252-3；MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V

Features • Optimized for a wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：950.11 Kbytes 页数：13 Pages

Infineon

英飞凌

丝印：040N08NS；Package：PG-TO252-3；StrongIRFETTM 2 Power-Transistor

Features • Optimized for a wide range of applications • N-Channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：920.08 Kbytes 页数：11 Pages

Infineon

英飞凌