丝印：03NC；Package：WDFN8；MOSFET – Power, Single N-Channel 40 V, 3.5 m, 103 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFWS003N04C − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：208.09 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：03NC；Package：WDFN8；MOSFET ??Power, Single, N-Channel 40 V, 3.5 m, 103 A

文件：203.96 Kbytes 页数：7 Pages

ONSEMI

安森美半导体