丝印：03P3；Package：SO8-FL；MOSFET - Power, Single P-Channel, SO8-FL -30 V, 1.8 m, -234 A

Features • Ultra Low RDS(on) to Improve System Efficiency • Advanced Package Technology in 5x6mm for Space Saving and Excellent Thermal Conduction • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Power Load Switch • Protection: Reverse Curr

文件：172.05 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：03P3；Package：SO8-FL；MOSFET - Power, Single P-Channel, SO8-FL -30 V, 1.8 m, -234 A

文件：203.11 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：03P35M-AP；Package：SOT-23-3L；-350V P-Channel Enhancement Mode MOSFET

Features - VDS = -350V ID =-0.3A - RDS(ON)

文件：967.99 Kbytes 页数：6 Pages

APME

永源微电子

丝印：03P3W；Package：SO8-FL；MOSFET - Power, Single P-Channel, SO8-FL -30 V, 1.8 m, -234 A

Features • Ultra Low RDS(on) to Improve System Efficiency • Advanced Package Technology in 5x6mm for Space Saving and Excellent Thermal Conduction • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Power Load Switch • Protection: Reverse Curr

文件：172.05 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：03P30；Package：DFN1006-3；P-Channel Enhancement Mode Power MOSFET

Description The RM03P30D1E uses advanced trench technology to provide excellent RDS(ON). General Features VDS =- 30V,I D =- 0.3A RDS(ON)

文件：202.17 Kbytes 页数：9 Pages

RECTRON

丽正

丝印：03P30；Package：SOT23；P-Channel Enhancement Mode Power MOSFET

Description The RM03P30S2E uses advanced trench technology to provide excellent RDS(ON). General Features VDS =- 30V,I D =- 0.3A RDS(ON)

文件：207.54 Kbytes 页数：9 Pages

RECTRON

丽正