丝印：03NW；Package：WDFN8；MOSFET – Power, Single N-Channel 40 V, 3.5 m, 103 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFWS003N04C − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

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ONSEMI

安森美半导体