丝印：03N06；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The 03N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：913.23 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：03N06；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The 03N06A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.10609 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：03N06；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

Description The 03N06L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：862.97 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：03N06；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The 03N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：913.23 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：03N06；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The 03N06A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.10609 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：03N06；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

Description The 03N06L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：862.97 Kbytes 页数：6 Pages

GOFORD

谷峰半导体