丝印：03N06；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

Description The 03N06L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

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GOFORD

谷峰半导体

MOSFET

Features - Improved dv/dt capability. - Fast switching. - RDS(ON)≤100mΩ@VGS=10V. - AEC-Q101 Qualified.

文件：498.29 Kbytes 页数：5 Pages

COMCHIP

典琦

MOSFET

Features - High density cell design for low RDS(ON). - Excellent package for heat dissipation.

文件：573.99 Kbytes 页数：6 Pages

COMCHIP

典琦

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 60V RDSON (MAX.) 3mΩ ID 97A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

文件：214.72 Kbytes 页数：6 Pages

EXCELLIANCE

杰力科技