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Marking：039INTB；Package：CCPAK1212i；650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package 1.Generaldescription TheGAN039-650NTBisa650V,33mΩGalliumNitride(GaN)FETinaCCPAK1212iinverted package.Itisanormally-offdevicethatcombinesNexperia’slatesthigh-voltageGaNHEMT H2technologyandlow-voltagesiliconMOSFETtechnologies—offeringsuperiorreliabilityand | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Marking：039INTBX；Package：SOT8005；650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package 1.Generaldescription TheGAN039-650NTBisa650V,33mΩGalliumNitride(GaN)FETinaCCPAK1212iinverted package.Itisanormally-offdevicethatcombinesNexperia’slatesthigh-voltageGaNHEMT H2technologyandlow-voltagesiliconMOSFETtechnologies—offeringsuperiorreliabilityand | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Marking：039INTBA；Package：SOT8005；650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package 1.Generaldescription TheGAN039-650NTBAisanAutomotivequalified650V,33mΩGalliumNitride(GaN)FETina CCPAK1212iinvertedpackage.Itisanormally-offdevicethatcombinesNexperia’slatesthighvoltage GaNHEMTH2technologyandlow-voltagesiliconMOSFETtechnologies—offering su | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA |
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