039INTB

型号：GAN039-650NTB；Package：CCPAK1212i；650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package

1.Generaldescription TheGAN039-650NTBisa650V,33mΩGalliumNitride(GaN)FETinaCCPAK1212iinverted package.Itisanormally-offdevicethatcombinesNexperia’slatesthigh-voltageGaNHEMT H2technologyandlow-voltagesiliconMOSFETtechnologies—offeringsuperiorreliabilityand

039INTBX

型号：GAN039-650NTB；Package：SOT8005；650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package

1.Generaldescription TheGAN039-650NTBisa650V,33mΩGalliumNitride(GaN)FETinaCCPAK1212iinverted package.Itisanormally-offdevicethatcombinesNexperia’slatesthigh-voltageGaNHEMT H2technologyandlow-voltagesiliconMOSFETtechnologies—offeringsuperiorreliabilityand

039INTBA

型号：GAN039-650NTBA；Package：SOT8005；650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package

1.Generaldescription TheGAN039-650NTBAisanAutomotivequalified650V,33mΩGalliumNitride(GaN)FETina CCPAK1212iinvertedpackage.Itisanormally-offdevicethatcombinesNexperia’slatesthighvoltage GaNHEMTH2technologyandlow-voltagesiliconMOSFETtechnologies—offering su