丝印：039INBB；Package：CCPAK1212；650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

1. General description The GAN039-650NBB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performanc

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丝印：039INBBX；Package：SOT8000；650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

1. General description The GAN039-650NBB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performanc

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650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

1. General description The GAN039-650NBB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performanc

文件：526.52 Kbytes 页数：14 Pages

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丝印：039INBBA；Package：SOT8000；650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

1. General description The GAN039-650NBBA is an Automotive qualified 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior rel

文件：301.11 Kbytes 页数：10 Pages

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650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

1. General description The GAN039-650NBB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performanc

文件：526.52 Kbytes 页数：14 Pages

NEXPERIA

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650 V、33 mΩ氮化镓(GaN) FET，采用CCPAK1212封装

The GAN039-650NBB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance. • Simplified driver design as standard level MOSFET gate drivers can be used:• 0 V to 12 V drive voltage\n• Gate threshold voltage VGSth of 4 V\n\n• Robust gate oxide with ±20 V VGS rating\n• High gate threshold voltage of 4 V for gate bounce immunity\n• Low body diode Vf for reduced losses and simp;

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650 V、33 mΩ氮化镓(GaN) FET，采用CCPAK1212封装

The GAN039-650NBBA is an Automotive qualified 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.\n • Fully automotive qualified to AEC-Q101:• 175 °C rating suitable for thermally demanding environments\n• Simplified driver design as standard level MOSFET gate drivers can be used:• 0 V to 12 V drive voltage\n• Robust gate oxide with ±20 V VGS rating\n• Low body diode Vf for reduced losses and simp;

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