型号：SVT035R5NDTR；Package：TO-252-2L；100A, 30V N-CHANNEL MOSFET

DESCRIPTION The SVT035R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

文件：369.32 Kbytes 页数：9 Pages

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型号：SVT035R5NDTR；Package：TO-252-2L；100A, 30V N-CHANNEL MOSFET

DESCRIPTION The SVT035R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

文件：369.3 Kbytes 页数：9 Pages

士兰微

型号：SVT035R5NDTR；Package：TO-252-2L；100A, 30V N-CHANNEL MOSFET

DESCRIPTION The SVT035R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

文件：369.3 Kbytes 页数：9 Pages

士兰微

型号：SVT035R5NDTR；Package：TO-252-2L；100A, 30V N-CHANNEL MOSFET

DESCRIPTION The SVT035R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

文件：369.3 Kbytes 页数：9 Pages

士兰微

型号：035R5ND；100A, 30V N-CHANNEL MOSFET

DESCRIPTION The SVT035R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

文件：369.3 Kbytes 页数：9 Pages

士兰微