零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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Marking:035R5NT;Package:TO-220-3L;100A, 30V N-CHANNEL MOSFET DESCRIPTION TheSVT035R5ND(MJ)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance. | SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司 | SILAN | ||
Marking:035R5NT;Package:TO-220-3L;100A, 30V N-CHANNEL MOSFET DESCRIPTION TheSVT035R5ND(MJ)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance. | SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司 | SILAN | ||
Marking:035R5NT;Package:TO-220-3L;100A, 30V N-CHANNEL MOSFET DESCRIPTION TheSVT035R5ND(MJ)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance. | SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司 | SILAN | ||
Marking:035R5NT;Package:TO-220-3L;100A, 30V N-CHANNEL MOSFET DESCRIPTION TheSVT035R5ND(MJ)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance. | SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司 | SILAN |
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