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SVT035R5NT

Marking:035R5NT;Package:TO-220-3L;100A, 30V N-CHANNEL MOSFET

DESCRIPTION TheSVT035R5ND(MJ)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance.

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

SVT035R5NT

Marking:035R5NT;Package:TO-220-3L;100A, 30V N-CHANNEL MOSFET

DESCRIPTION TheSVT035R5ND(MJ)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance.

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

SVT035R5NT

Marking:035R5NT;Package:TO-220-3L;100A, 30V N-CHANNEL MOSFET

DESCRIPTION TheSVT035R5ND(MJ)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance.

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

SVT035R5NT

Marking:035R5NT;Package:TO-220-3L;100A, 30V N-CHANNEL MOSFET

DESCRIPTION TheSVT035R5ND(MJ)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance.

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

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