7448991033

Marking：033；WE-MCRI SMT Molded Coupled Inductor

GeneralInformation: AmbientTemperature(referring toIR)-40upto+85°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

TPS61033DRLR

Marking：033；Package：SOT-5X3；TPS61033 5.5-V 5.5-A 2.4-MHz Fully-Integrated Synchronous Boost Converter, with Output Discharge Function

1Features •Inputvoltagerange:1.8Vto5.5V •Outputvoltagerange:2.2Vto5.5V –WhenFBconnecttoVINoutputvoltagefixed 5.0V •Twovalleyswitchingcurrentlimitoptions –TPS61033:5.5-Atypical –TPS610333:1.85-Atypical •Highefficiencyandpowercapability –Two25-mΩ

TPS61033DRLR

Marking：033；Package：SOT-5X3；TPS61033X 5.5-V 5.5-A 2.4-MHz Fully-Integrated Synchronous Boost Converter, with Output Discharge Function

1Features •Inputvoltagerange:1.8Vto5.5V •Outputvoltagerange:2.2Vto5.5V(TPS61033) –FBconnectstoVINoutputvoltageforfixed5.0 V(TPS61033X) •Twovalleyswitchingcurrentlimitoptions –TPS61033:5.5-Atypical –TPS610333:1.85-Atypical •Highefficiencyandpowerca

BSC033N08NS5SC

Marking：033N08SC；Package：PG-WSON-8；OptiMOSTM 5 Power-Transistor, 80 V

Features •Dual-sidecooledpackagewithlowestJunction-topthermalresistance •Optimizedforsynchronousrectificationinserveranddesktop •100avalanchetested •Superiorthermalresistance •N-channel •175°Crated •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingto

IPP033N03LF2S

Marking：033N03F2；Package：PG-TO220-3；MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V

Features •Optimizedforawiderangeofapplications •N‑channel,logiclevel •100%avalanchetested •175°Crated •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21

IPP033N04NF2S

Marking：033N04NS；Package：PG-TO220-3；MOSFET StrongIRFETTM2 Power-Transistor

Features •Optimizedforwiderangeofapplications •N-channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

ISC033N03LF2S

Marking：033N03F2；Package：PG-TDSON-8；MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V

Features •Optimizedforawiderangeofapplications •N‑channel,logiclevel •100%avalanchetested •175°Crated •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21

ISZ033N03LF2S

Marking：033N03F；Package：PG-TSDSON-8；MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V

Features •Optimizedforwiderangeofapplications •N‑channel,logiclevel •100%avalanchetested •175°Crated •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21

PSMP033-60YE

Marking：03360YE；Package：SOT669；60 V, P-channel Trench MOSFET

1.Generaldescription P-channelenhancementmodeMOSFETinanLFPAK56(PowerSO8)Surface-MountedDevice (SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Suitableforthermallydemandingenvironmentsdueto175°Cra

PSMQC033N06NS1

Marking：033N06NS；Package：DFN5060-8L；60V N-Channel Enhancement Mode MOSFET

Feature RDS(ON),VGS@10V,ID@40A