丝印：033；WE-MCRI SMT Molded Coupled Inductor

General Information: Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：645.28 Kbytes 页数：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：033；Package：SOT-5X3；TPS61033 5.5-V 5.5-A 2.4-MHz Fully-Integrated Synchronous Boost Converter, with Output Discharge Function

1 Features • Input voltage range: 1.8 V to 5.5 V • Output voltage range: 2.2 V to 5.5 V – When FB connect to VIN output voltage fixed 5.0 V • Two valley switching current limit options – TPS61033: 5.5-A typical – TPS610333: 1.85-A typical • High efficiency and power capability – Two 25-mΩ

文件：1.83771 Mbytes 页数：28 Pages

TI

德州仪器

丝印：033；Package：SOT-5X3；TPS61033X 5.5-V 5.5-A 2.4-MHz Fully-Integrated Synchronous Boost Converter, with Output Discharge Function

1 Features • Input voltage range: 1.8 V to 5.5 V • Output voltage range: 2.2 V to 5.5 V(TPS61033) – FB connects to VIN output voltage for fixed 5.0 V(TPS61033X) • Two valley switching current limit options – TPS61033: 5.5-A typical – TPS610333: 1.85-A typical • High efficiency and power ca

文件：1.85664 Mbytes 页数：29 Pages

TI

德州仪器

丝印：033N08SC；Package：PG-WSON-8；OptiMOSTM 5 Power-Transistor, 80 V

Features • Dual-side cooled package with lowest Junction-top thermal resistance • Optimized for synchronous rectification in server and desktop • 100 avalanche tested • Superior thermal resistance • N-channel • 175°C rated • Pb-free lead plating; RoHS compliant • Halogen-free according to

文件：1.09223 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：033N03F2；Package：PG-TO220-3；MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V

Features • Optimized for a wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：837.73 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：033N04NS；Package：PG-TO220-3；MOSFET StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：998.61 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：033N03F2；Package：PG-TDSON-8；MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V

Features • Optimized for a wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：1.44799 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：033N03F；Package：PG-TSDSON-8；MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V

Features • Optimized for wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：1.26494 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：03360YE；Package：SOT669；60 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • High thermal power dissipation capability • Suitable for thermally demanding environments due to 175 °C ra

文件：274.78 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：033N06NS；Package：DFN5060-8L；60V N-Channel Enhancement Mode MOSFET

Feature  RDS(ON), VGS@10V, ID@40A

文件：752.07 Kbytes 页数：7 Pages

PANJIT

強茂