OptiMOS ™ 5 功率 MOSFET 80 V，采用 SuperSO8 DSC 封装，具有双面冷却功能，可增强热性能

\n优势:\n• Lower conduction losses and switching losses for higher system efficiency\n• Improved heat dissipation for high power density and improved reliability\n• Superior power handling capability and ruggedness for longer lifetime\n• Drop-in replacement for SuperSO8 and PQFN 5x6 easy to design-in,;

Infineon

英飞凌

丝印：033N08SC；Package：PG-WSON-8；OptiMOSTM 5 Power-Transistor, 80 V

Features • Dual-side cooled package with lowest Junction-top thermal resistance • Optimized for synchronous rectification in server and desktop • 100 avalanche tested • Superior thermal resistance • N-channel • 175°C rated • Pb-free lead plating; RoHS compliant • Halogen-free according to

文件：1.09223 Mbytes 页数：11 Pages

INFINEON

英飞凌

包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：TRENCH 40\u003c-\u003c100V

INFINEON

英飞凌

TDSON-8

英飞凌/实单必成

上传：深圳市拓芯泰电子科技有限公司

N/A

英飞凌

上传：深圳市振宏微科技有限公司