丝印：03006N5；Package：PG-TSON-8-4；MOSFET OptiMOS™M 5 Power-Transistor, 60 V

Features • Optimized for synchronous rectification • 100 avalanche tested • Superior thermal resistance • N-channel, normal level • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.84484 Mbytes 页数：12 Pages

Infineon

英飞凌

MOSFET OptiMOS™M 5 Power-Transistor, 60 V

Features • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resistance • N-channel, normal level • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.84484 Mbytes 页数：12 Pages

Infineon

英飞凌